oxide+of+silicon
91Chemical vapor deposition — DC plasma (violet) enhances the growth of carbon nanotubes in this laboratory scale PECVD apparatus. Chemical vapor deposition (CVD) is a chemical process used to produce high purity, high performance solid materials. The process is often used in …
92Deal–Grove model — The Deal–Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to analyze thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965… …
93aluminum processing — Introduction preparation of the ore for use in various products. Aluminum, or aluminium (Al), is a silvery white metal with a melting point of 660° C (1,220° F) and a density of 2.7 grams per cubic centimetre. The most abundant… …
94Deal-Grove model — The Deal Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to analyze thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965… …
95Iron — Fe redirects here. For other uses, see Fe (disambiguation). This article is about the chemical element. For other uses, see Iron (disambiguation). manganese …
96chemical element — Introduction also called element, any substance that cannot be decomposed into simpler substances by ordinary chemical processes. Elements are the fundamental materials of which all matter is composed. This article considers the… …
97Direct bonding — describes a wafer bonding process without any additional intermediate layers. The bonding process is based on chemical bonds between two surfaces of any material possible meeting numerous requirements.[1] These requirements are specified for the… …
98High-k dielectric — The term high κ dielectric refers to a material with a high dielectric constant (κ) (as compared to silicon dioxide) used in semiconductor manufacturing processes which replaces the silicon dioxide gate dielectric. The implementation of high κ… …
99Fluorescence interference contrast microscopy — Fluorescence interference contrast (FLIC) microscopy is a microscopic technique developed to achieve z resolution on the nanometer scale. FLIC occurs whenever fluorescent objects are in the vicinity of a reflecting surface (e.g. Si wafer). The… …
100Vacuum tube — This article is about the electronic device. For experiments in an evacuated pipe, see free fall. For the transport system, see pneumatic tube. Modern vacuum tubes, mostly miniature style In electronics, a vacuum tube, electron tube (in North… …
